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Al rich AlN/AlGaN Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Talal Mohammed Ahmad Al tahtamouni ,
Neeraj Nepal ,
Jingyu Lin  and
Hongxing Jiang
Talal Mohammed Ahmad Al tahtamouni
Affiliation:
talal@phys.ksu.edu, kansas state university, physics, 1604 roof drive D28, Manhattan, KS, 66502, United States, 785-395-5909
Neeraj Nepal
Affiliation:
neeraj@phys.ksu.edu, Kansas State University, Physics Department, 116 CW Hall, Manhattan, KS, 66506, United States
Jingyu Lin
Affiliation:
jylin@phys.ksu.edu, Kansas State University, Physics Department, 116 CW Hall, Manhattan, KS, 66506, United States
Hongxing Jiang
Affiliation:
jiang@phys.ksu.edu, Kansas State University, Physics Department, 116 CW Hall, Manhattan, KS, 66506, United States
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Abstract

Two sets of AlN/AlxGa1−xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1−xN QWs with (x ∼ 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1−xN with (Lw = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼ 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

Keywords

optical propertiesnitridepiezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I02-04
Copyright
Copyright © Materials Research Society 2007

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