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AlGaInP/GaInAs/GaAs Modfet Devices With Self-Aligned P+-GaAs Gate Structure

Published online by Cambridge University Press:  21 February 2011

W. Pletschen ,
K.H. Bachem ,
P.J. Tasker  and
K. Winkler
W. Pletschen
Affiliation:
Fraunhofer-Inst. of Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany
K.H. Bachem
Affiliation:
Fraunhofer-Inst. of Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany
P.J. Tasker
Affiliation:
Fraunhofer-Inst. of Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany
K. Winkler
Affiliation:
Fraunhofer-Inst. of Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany
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Abstract

A self-aligned fabrication scheme of a novel AlGalnP/GalnAs/GaAs-MODFET device has been developed. Two characteristic features have been incorporated in the device structure: An AlGaInP barrier which provides a larger conduction band offset than the commonly used AlGaAs and a highly carbon-doped p-type GaAs gate structure which supports a very simple fabrication scheme. Using 1 μm optical lithography we have fabricated first demonstrator devices with a current gain cut-off frequency of 60 GHz and a power gain cut-off frequency of 140 GHz. In addition, the devices show large gate-drain diode breakdown voltages in excess of 30 V and gate currents as low as 50 nA even at gatesource voltages of -5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

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