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AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Travis Anderson ,
Fan Ren ,
Lars Voss ,
Mark Hlad ,
Brent P Gila ,
Stephen Pearton ,
Lance Covert ,
Jenshan Lin ,
Julien Thuret  and
H Lahreche
...Show all authors
Travis Anderson
Affiliation:
tjanderson@che.ufl.edu, University of Florida, Chemical Engineering, PO Box 116005, Gainesville, FL, 32611, United States
Fan Ren
Affiliation:
ren@che.ufl.edu, University of Florida, Chemical Engineering, PO Box 116005, Gainesville, FL, 32611, United States
Lars Voss
Affiliation:
lfvoss@gmail.com, University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Mark Hlad
Affiliation:
ramair@ufl.edu, University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Brent P Gila
Affiliation:
bgila@mse.ufl.edu, University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Stephen Pearton
Affiliation:
spear@mse.ufl.edu, University of Florida, Materials Science and Engineering, PO Box 116400, Gainesville, FL, 32611, United States
Lance Covert
Affiliation:
lncovert@gmail.com, University of Florida, Electrical and Computer Engineering, PO Box 116130, Gainesville, FL, 32611, United States
Jenshan Lin
Affiliation:
jenshan@ufl.edu, University of Florida, Electrical and Computer Engineering, PO Box 116130, Gainesville, FL, 32611, United States
Julien Thuret
Affiliation:
julien.thuret@picogiga.com, Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 91971, Courtaboeuf, N/A, France
H Lahreche
Affiliation:
julien.thuret@picogiga.com, Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 9 1971, Courtaboeuf, N/A, France
P Bove
Affiliation:
julien.thuret@picogiga.com, Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 91971, Courtaboeuf, N/A, France
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Abstract

The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

Keywords

III-Vnitridedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I16-02
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Ahmad, I., Kasisomayajula, V., Holtz, M., Berg, J. M., Kurtz, S. R., Tigges, C. P., Allerman, A. A., and Baca, A. G.,Appl. Phys. Lett. 86, 173503 (2005).Google Scholar
2. Makimoto, T., Yamauchi, Y., and Kumakura, K., Appl. Phys. Lett. 84, 1964 (2004)Google Scholar
3. Zhang, A. P., Rowland, L. B., Kaminsky, E. B., Kretchmer, J. W., Beaupre, R. A., Garrett, J. L., Tucker, J. B., Edward, B. J., Foppes, J.,Allen, A. F., Solid-State Electron. 47 821 (2003).Google Scholar
4. Saito, W., Domon, T., Omura, I., Kuraguchi, M., Takada, Y., Tsuda, K. and Yamaguchi, M., IEEE Electron Dev.Lett. 27,326(2006).Google Scholar
5. Wang, R., Cai, Y., Tang, W., Lau, K.M. and Chen, K.J., IEEE Electron. Dev. Lett. 27,633 (2006).Google Scholar
6. Tipirnemi, N., Koudymov, A., Adivarahan, V., Yang, J., Simin, G. and Khan, M. A., IEEE Electron.Dev.Lett. 27, 716(2006).Google Scholar
7. Dora, Y., Chakraborty, A., McCarthy, L., Keller, S., DenBaars, S.P. and Mishra, U.K.,IEEE Electron.Dev.Lett.27, 713(2006).Google Scholar
8. Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., and Parikh, P., IEEE Elec. Dev. Lett. 25, 117(2004)Google Scholar
9. Fanning, D. M., C., Witkowski, C., Lee, Dumka, D. C., Tserng, H. Q., Saunier, P., Gaiewski, W., Piner, E. L., Linthicum, K. J., Johnson, J. W. (2005). “25W X-band GaN on Si MMIC” GaAs Man.Tech. Digest 2005Google Scholar
10. Minko, A.,Hoel, V.,Morvan, E.,Grimbert, B., Soltani, A., Delos, E., Ducateau, D., Gaquiere, C., Theron, D., Jaeger, J.C., Lahreche, H., Wedzikowski, L.,Langer, R. and Bove, P., IEEE Electron Dev.Lett. 25,453 (2004).Google Scholar
11. Singhal., S., Li, T., Chaudhari, A., Hanson, A.W., Therrien, R., Johnson, J.W., Nagy, W., Marquart., J., Rajagopal, P., Piner, E.L. and Linthicum, K.J., “Reliability of Large Periphery GaN-on-Si HFETs” Reliability of Compound Semiconductors Workshop 2005, Palm Springs, CA Google Scholar
12. Johnson, J.W., Gao, J., Lucht., K., Williamson, J., Strautin, C., Riddle, J., Therrien, R., Rajagopal, P., Roberts, J.C., Vescan, A., Brown, J.D., Hanson, A., Singhal, S., Borges, R., Piner, E. L. and Linthicum, K.J., Electrochemical Society Proceedings 2004-06, 405(2004)..Google Scholar
13. Johnson, J.W.,Piner, E.L.,Vescan, A.,Therrien, R.,Rajagopal, P.,Roberts, J.C.,Brown, J.D.,al, S.Singh and Linthicum, K.J.,IEEE Electron Dev.Lett. 25, 459(2004).Google Scholar
14. Jang, S., Ren, F., Pearton, S.J., Gila, B.P., Hlad, M., Abernathy, C.R., Yang, H.S., Pan, C.J., Chyi, J.I., Bove, P., Lareche, H. and Thuret, J., J. Electron. Mater. 35,685(2006).Google Scholar
15. Nagy, W., Singhal, S., Borges, R., Johnson, J.W., Brown, J.D., Therrien, R., Chaudhari, A., Hanson, A..W., Riddle, J., Booth, S., Rajagopal, P., Piner, E.L. and Linthicum, K.J., (2005). “150W GaN-on-Si RF Power Transistor” Paper presented at the IEEE MTT-S 2005 International Microwave Symposium, Long Beach, CA.Google Scholar
16. Voss, L., Pearton, S.J., Ren, F., Bove, P., Lareche, H. and Thuret, J., J.Electrochem. Soc. 153, G681(2006).Google Scholar
17. T. J.Anderson, Ren, F., Voss, L., Hlad, M., Gila, B. P., Covert, L., Lin, J., Pearton, S. J., Bove, P., Lahreche, H., and Thuret, J., J. Vac. Sci. Technol. B 24, 2302 (2006).Google Scholar
18. Eastman, L. F., Tilak, V.. Smart, J., Green, B. M., Chumbes, E. M., Dimitrov, R., Kim, H., Ambacher, O. S., Weimann, N., Prunty, T., Murphy, M., Schaff, W. J. and Shealy, J. R., IEEE Trans. Electron Dev., 48, 479(2001).Google Scholar
19. Binari, S. C., Ikossi, K., Roussos, J. A., Kruppa, W., Park, D., Dietrich, H. B., Koleske, D. D., Wickenden, A. E. and Henry, R. L., IEEE Trans. Electron Dev. , 48, 465(2001).Google Scholar
20. Vetury, R., Zhang, N. Q., Keller, S., and Mishra, U. K., IEEE Trans. Electron. Dev. ED48, 560(2001).Google Scholar
21. Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., and Eastman, L. F., IEEE Electron. Dev. Lett., 21, 268(2000).Google Scholar
22. Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C. and Han, J., Appl. Phys. Lett. 80,1661 (2002).Google Scholar
23. Vertiatchikh, A., Eastman, L. F., Schaff, W. J. and Prunty, I., Electronics Lett. 38,. 388 (2002).Google Scholar
24. Johnson, J.W., Ren, F., Pearton, S.J., Baca, A.G., Han, J., Dabiran, A.M. and Chow, P.P., J. Nanosci. Nanotech. 2, 325 (2002).Google Scholar
25. Johnson, J.W., Baca, A.G., Briggs, R., Shul, R.J., Wendt, J., Monier, C., Ren, F., Pearton, S.J., Dabiran, A., Wowchack, A., Polley, C.J. and Chow, P.P., Solid-State Electron. 45, 1979 (2001).Google Scholar
26. Karmalkar, S., Shur, M.S. and Gaska, R., in Wide Energy Bandgap Electronic Devices, ed. Ren, F. and Zolper, J.C. (World Scientific, Singapore, 2003).Google Scholar