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AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

Published online by Cambridge University Press:  21 February 2011

Hua-Shuang Kong ,
Michelle Leonard ,
Gary Bulman ,
Gerry Negley  and
John Edmond
Hua-Shuang Kong
Affiliation:
Cree Research, Inc., Durham, N.C. 27713, USA
Michelle Leonard
Affiliation:
Cree Research, Inc., Durham, N.C. 27713, USA
Gary Bulman
Affiliation:
Cree Research, Inc., Durham, N.C. 27713, USA
Gerry Negley
Affiliation:
Cree Research, Inc., Durham, N.C. 27713, USA
John Edmond
Affiliation:
Cree Research, Inc., Durham, N.C. 27713, USA
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Abstract

Blue LEDs with double-heterojunction (DH) have been produced in AIN-GaN system grown on n-type 6H-SiC substrates via metalorganic chemical vapor deposition (MOCVD). These devices employ a GaN active layer bordered by Mg doped p-type Al0.1Ga0.9N and Si doped n-type Al0.1Ga0.9N. A vertical device design was utilized with a p-type Au contact centered on the chip top side for wire bonding. The backside contact to the SiC is Ni. The peak emission from these devices is 430 nm with a FWHM of 65 nm, producing a deep blue color. The output power is 1.7 mW at 20 mA which corresponds to an external quantum efficiency of 3%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 903
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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