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AlInAs Band Gap Modulations Observed by Tem and Optical Measurements

Published online by Cambridge University Press:  10 February 2011

E. Bearzi ,
T. Benyattou ,
C. Bru-Chevallier ,
G. Guillot ,
J. C. Harmand ,
O. Marty  and
M. Pitaval
E. Bearzi
Affiliation:
L.P.M. (URA CNRS 358) INSA de LYON Bât. 502, 69621 Villeurbanne Cedex, France
T. Benyattou
Affiliation:
L.P.M. (URA CNRS 358) INSA de LYON Bât. 502, 69621 Villeurbanne Cedex, France
C. Bru-Chevallier
Affiliation:
L.P.M. (URA CNRS 358) INSA de LYON Bât. 502, 69621 Villeurbanne Cedex, France
G. Guillot
Affiliation:
L.P.M. (URA CNRS 358) INSA de LYON Bât. 502, 69621 Villeurbanne Cedex, France
J. C. Harmand
Affiliation:
CNET Bagneux (France Télécom) 96 ave. Ravera, 92220 Bagneux Cedex, France
O. Marty
Affiliation:
D.P.M. (URA CNRS 172) Université Lyon 1, Bât 503, 69622 Villeurbanne Cedex, France
M. Pitaval
Affiliation:
D.P.M. (URA CNRS 172) Université Lyon 1, Bât 503, 69622 Villeurbanne Cedex, France
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Abstract

At a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

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References

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