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All-organic single-transistor permanent memory device

Published online by Cambridge University Press:  01 February 2011

Raoul Schroeder ,
Leszek A. Majewski ,
Monika Voigt  and
Martin Grell
Raoul Schroeder
Affiliation:
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road Sheffield, S3 7RH, UK Email: M.Grell@sheffield.ac.uk
Leszek A. Majewski
Affiliation:
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road Sheffield, S3 7RH, UK Email: M.Grell@sheffield.ac.uk
Monika Voigt
Affiliation:
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road Sheffield, S3 7RH, UK Email: M.Grell@sheffield.ac.uk
Martin Grell
Affiliation:
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road Sheffield, S3 7RH, UK Email: M.Grell@sheffield.ac.uk
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Abstract

We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3×10-a4, while time-dependent studies show retention times of 14 hours and more.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.19
Copyright
Copyright © Materials Research Society 2005

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References

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