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Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

Published online by Cambridge University Press:  01 February 2011

Agata Sakic ,
Yann Civale ,
Lis K. Nanver ,
Cleber Biasotto  and
Vladimir Jovanovic
Agata Sakic
Affiliation:
a.sakic@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Yann Civale
Affiliation:
y.civale@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Lis K. Nanver
Affiliation:
l.k.nanver@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Cleber Biasotto
Affiliation:
c.biasotto@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Vladimir Jovanovic
Affiliation:
v.jovanovic@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
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Abstract

Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

Keywords

epitaxyAlcrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A20-03
Copyright
Copyright © Materials Research Society 2010

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