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Alternating-Current Light-Emitting Diodes and their Transient Characteristics: Response Time and Carrier Transport

Published online by Cambridge University Press:  10 February 2011

A. J. Pal ,
T. öStergÅrd ,
R. österbacka ,
K-M. KÄllman  and
H. Stubb
A. J. Pal
Affiliation:
Åbo Akademi University, Department of Physics, Porthansgatan 3, FIN-20500 ABO (Finland), henrik.stubb@abo.fi Indian Association for the Cultivation of Science, Department of Solid State Physics, Jadavpur, Calcutta 700 032 (India)
T. öStergÅrd
Affiliation:
Åbo Akademi University, Department of Physics, Porthansgatan 3, FIN-20500 ABO (Finland), henrik.stubb@abo.fi
R. österbacka
Affiliation:
Åbo Akademi University, Department of Physics, Porthansgatan 3, FIN-20500 ABO (Finland), henrik.stubb@abo.fi
K-M. KÄllman
Affiliation:
Åbo Akademi University, Department of Physics, Porthansgatan 3, FIN-20500 ABO (Finland), henrik.stubb@abo.fi
H. Stubb
Affiliation:
Åbo Akademi University, Department of Physics, Porthansgatan 3, FIN-20500 ABO (Finland), henrik.stubb@abo.fi
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Abstract

We report the fabrication and characterization of alternating current light-emitting diodes (LEDs) with quinquethiophene as the emitting material. We have obtained equal electroluminescence intensity in both bias sections. From the frequency response of the LEDs, we have estimated the device response times and compared them with the response times obtained from the transient response of dc LEDs. Langmuir-Blodgett film deposition technique has been employed to control the thickness of the emitting layer on the molecular scale. We have shown that the response times originate from the accumulation rather than the transit of charge carriers. We have compared the photo- and electroluminescence spectra of QT LEDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 488: Symposium J – Electrical, Optical & Magnetic Properties of Organic IV , 1997 , 93
Copyright
Copyright © Materials Research Society 1998

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