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Aluminum CVD for Interconnect Thin Films

Published online by Cambridge University Press:  22 February 2011

Donna M. Speckman
Donna M. Speckman*
Affiliation:
The Aerospace Corporation, Electronics Technology Center, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Aluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a standard low pressure CVD reactor system, with argon as a carrier gas. Film quality and morphology were found to be a sensitive function of reactor flow dynamics. High purity films were obtained with resistivities of ∼5.0 μΩ-cm and grain sizes of 1–2 μm in diameter, but many of these films also exhibited aluminum whiskers, which caused VLSI processing problems. The CVD aluminum films exhibited conformal deposition over 0.5μm topographies, and also demonstrated electromigration lifetimes comparable to those of sputtered aluminum films. Aluminum films deposited using TMAA were also found to be selective at 90°C for titanium oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 305
Copyright
Copyright © Materials Research Society 1993

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References

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