Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T08:57:53.368Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Hydrogenated Semiconductors

Published online by Cambridge University Press:  28 February 2011

Jeffrey A. Reimer
Jeffrey A. Reimer*
Affiliation:
Department of Chemical Engineering, 201 Gilman Hall, University of California, Berkeley, California 94720-9989
Get access

Abstract

Semiconducting thin films are produced in plasma and CVD reactors and are commercially useful materials because of a ubiquitous presence of hydrogen, a low density of defects, and electro-optical properties which vary systematically with composition.However, little is known about how variations in fundamental growth parameters produce concomitant changes in film properties, particularly hydrogen incorporation.The reason for this gap in knowledge derives partly from the lack of adequate structural probes of disordered materials.In recent years nuclear magnetic resonance spectroscopy (NMR) has emerged as a powerful probe of the microstructure of amorphous semiconductors.I will discuss recent developments in the application of NMR to studies of amorphous hydrogenated semiconductors, and interpret these results in terms of the chemistry and physics of the growth process.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 157
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Electronic Processes in Non-Crystalline Materials, Mott, N.F. and Davis, E.A., Oxford University Press, (1979).Google Scholar
2. Semiconductors and Semimetals, Vol 21B, Jacques Pankove, Ed.“The Optical Absorbtion Edge of a-Si:H”, Cody, G.D., p.1 1.Google Scholar
3. Brodsky, M.H., Solid State Comm. 36, 55 (1980).CrossRefGoogle Scholar
4. Reference 2, “Optical Properties of Defect States in a-Si:H” Amer, Nabil M. and Jackson, Warren B., p.83.Google Scholar
5. Semiconductors and Semimetals, Vol 21C, Jacques Pankove, Ed.“Magnetic Resonance Measurements in a-Si:H”, Taylor, P.C., p.99.Google Scholar
6. Reference 2, “The Vibrational Spectra of a-Si:H”, Zanzucchi, P.J., p.113.Google Scholar
7. Baum, J., Gleason, K.K., Pines, A., Garroway, A.N., Reimer, J.A., Phys.Rev.Lett. 56, 1377 (1986).Google Scholar
8. (a).Reference 5, “Doping Effects in a-Si:H”, Beyer, W. and Overhof, H., p.258.Google Scholar
(b). Reference 5, “Defects and Density of Localized States”, David Adler, Part A, p.291.Google Scholar
9. Knights, J.C., Hayes, T.M., Mikkelsen, J.C., Phys.Rev.Lett. 39, 712 (1977).Google Scholar
10. Reimer, Jeffrey A., Duncan, T.M., Phys.Rev.B15, 27, 4895 (1983).Google Scholar
11. Reference 2,Part A, “Homogeneous Chemical Vapor Deposition”, Scott, Bruce A., p.123.Google Scholar
12. Scott, Bruce A., Reimer, Jeffrey A., Longeway, Paul A., J.Appl.Phys. 54, 6853 (1983).Google Scholar
13. Reimer, J.A., Vaughan, R.W., Knights, J.C., Solid State Comm. 37, 161 (1981).Google Scholar