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Amorphous Silicon-Based Superlattices and their Potentials to Device Applications

Published online by Cambridge University Press:  28 February 2011

Masataka Hirose ,
Naoki Murayama ,
Seiichi Miyazaki  and
Yohji Ihara
Masataka Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
Naoki Murayama
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
Seiichi Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
Yohji Ihara
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
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Abstract

Two types of amorphous silicon (a-Si:H)/silicon nitride (a-Si3 N4 :H) multilayers have been prepared either by turning-off the plasma at each step of individual layer growth (step by step deposition) or by quick gas switching without interrupting the plasma (continuous deposition). It is found that the continuous deposition causes a significant mixing of nitrogen into the a-Si:H well layers and deteriorates the compositional abruptness in the a-Si:H/a-Si3N4 :H interface. Also, undesirable incorporation of nitrogen into the a-Si:H well layers tends to induce nonradiative recombination centers near the interface.

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References

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