Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-22T20:34:36.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

Published online by Cambridge University Press:  10 February 2011

J.T. Walton ,
M. Amman ,
G. Conti ,
W.S. Hong ,
P.N. Luke  and
F.P Ziemba
J.T. Walton
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720, jtwalton@lbl.gov
M. Amman
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
G. Conti
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
W.S. Hong
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
P.N. Luke
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
F.P Ziemba
Affiliation:
Quantrad Sensor Inc., Santa Clara, CA 95054
Get access

Abstract

Application of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 351
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Walton, J.T. and Haller, E.E., in Nuclear Radiation Detector Materials, edited by Hailer, E.E., Kraner, H.W. and Higinbotham, W.A., 16 ( Mater. Res. Soc., Pittsburgh, PA, 1983) pp. 141–160.Google Scholar
2 Walton, J.T., Hong, W.S., Luke, P.N., Wang, N.W., and Ziemba, F.P., IEEE Trans. Nucl. Sc., 44, No. 3, 961 (1997).Google Scholar
3 Conti, G., Ager, J.W III, Amman, M., Hong, W.S, Luke, P.N., N, Wang, and Walton, J.T., to be submitted to Applied Physics Letters.Google Scholar
4 IEEE Nuclear Science Standards Collection, ANSI/EEE Std. 300-1988 (IEEE Standard Test Procedures for Amplifiers and Preamplifiers used with Detection of Ionizing Radiation). IEEE, New York, N.Y, 1991.Google Scholar
5 IEEE Nuclear Science Standards Collection, ANSI/IEEE Std. 759-1984(IEEE Standard Test Procedures for Semiconductor X-ray Energy Spectrometers) IEEE, New York, N.Y, 1991.Google Scholar
6 Street, R.A., Hydrogenated Amorphous Silicon. (Cambridge University Press, 1991), p. 264.Google Scholar
7 Roderick, E.H., Metal Semiconductor Contacts, (Oxford University Press, 1978), p. 25.Google Scholar
8 Roderick, E.H., Metal Semiconductor Contacts, (Oxford University Press, 1978), p. 59.Google Scholar
9 Bosnell, J.R. and Voisey, U.C., Thin Solid Films, 6, 161, (1970).Google Scholar
10 Hultman, L., Robertsson, A., Hentzell, H.T. G., Engstrom, I and Psaras, P.A.. J. Appl. Phys, 62 (9), 3647, (1987).Google Scholar