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An Atom Probe Study of Boron Segregation to Line and Planar Defects in Ni3Ai
Published online by Cambridge University Press: 28 February 2011
Abstract
Atom probe analyses of rapidly solidified, boron-doped Ni-24 at. % Al subjected to various heat treatments have shown boron segregation to a wide range of linear and planar defects. These include dislocations, superlattice intrinsic stacking faults, antiphase boundaries, twin boundaries, low-angle boundaries (dislocation cell walls), and high-angle grain boundaries. Boron coverage of these features was found to vary along a particular linear or planar defect and from boundary to boundary.
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