Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-10T08:51:41.168Z Has data issue: false hasContentIssue false
  • English
  • Français

An Organic FET structure for unconventional substrates

Published online by Cambridge University Press:  11 February 2011

Annalisa Bonfiglio ,
Fulvia Mameli ,
Ornella Sanna  and
Laurence Lutsen
Annalisa Bonfiglio
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy INFM S3 - nanoStructures and bioSystems at Surfaces, Via Campi 213/A, 41100 Modena, Italy
Fulvia Mameli
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy
Ornella Sanna
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy
Laurence Lutsen
Affiliation:
IMEC-IMOMEC Division, L.U.C. Campus, SBG Department, Building D, B-3590 Diepenbeek, Belgium
Get access

Abstract

A structure for organic TFTs suitable for being transferred on unusual substrates is described in each technological step. The proposed device consists in a “bottom-structure” assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage is to avoid the substrate because the insulator itself is able to support the whole structure. For this reason, application to any kind of substrates after the built-in process is possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 761: Symposia B/C/D/F/G/NN – Molecular Electronics , 2002 , D4.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dimitrakopoulos, C., Malenfant, P. R. L., Adv. Mater. 14, 99 (2002)Google Scholar
2. Dimitrakopoulos, C. D., Furman, B. K., Graham, T., Hegde, S., and Purushothaman, S., Synth. Met. 92, 47 (1998).Google Scholar
3. Forrest, S., MRS Bull., 108 (Feb. 2001)Google Scholar
4. Horowitz, G., Adv. Mater. 10, 365 (1998).Google Scholar
5. Garnier, F., Chem. Phys. 227, 253 (1998)Google Scholar
6. Katz, H. E., J. Mater. Chem. 7, 369 (1997).Google Scholar
7. Lutsen, L., Adriaensens, P., Becker, H., Van Breemen, A.J., Vanderzande, D., Gelan, J., Macromol., 32, 6517 (1999)Google Scholar
8. Lin, Y.Y., Gundlach, D.J., Nelson, S., Jackson, T.N., IEEE Elect. Dev. Lett. 18, 606 (1997)Google Scholar
9. Shtein, M., Mapel, J., Benzinger, J.B., Forrest, S.R., Appl. Phys. Lett. 81 (2), 268 (2002)Google Scholar
10. Bao, Z., Dodabalapur, A., Lovinger, A.J., Appl. Phys. Lett 69 (26), 4108 (1996)Google Scholar