Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-29T23:58:01.706Z Has data issue: false hasContentIssue false
  • English
  • Français

An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

Published online by Cambridge University Press:  10 February 2011

W. H. Lai ,
M. F. Li ,
J. S. Pan ,
R. Liu ,
L. Chan  and
T. C. Chua
W. H. Lai
Affiliation:
Dept of Electrical Engineering, National University of Singapore, Singapore, laiwh@charteredsemi.com
M. F. Li
Affiliation:
Dept of Electrical Engineering, National University of Singapore, Singapore, laiwh@charteredsemi.com
J. S. Pan
Affiliation:
Central Characterization Laboratory, Institute of Materials Research and Engineering, Singapore
R. Liu
Affiliation:
Surface Science Lab, Dept of Physics, National University of Singapore, Singapore
L. Chan
Affiliation:
R & D Dept, Chartered Semiconductor Manufacturing Limited, Singapore
T. C. Chua
Affiliation:
Applied Materials South-East Asia Pte Ltd, Singapore
Get access

Abstract

Earlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 171
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Massoud, H. Z., in Rapid Thermal Processing, edited by Fair, R. B. (Academic Press, San Diego, 1993), p. 45 and references therein.Google Scholar
2.Borisenko, V. E. and Hesketh, P. J., Rapid Thermal Processing of Semiconductors (Plenum Press, New York, 1997), p. 193 and references therein.Google Scholar
3.Harrison, H. B., Misiura, A., Dimitrijev, S., Sweatman, D., Yao, Z., and Yeow, Y. -T., Mat. Res. Soc. Symp. Proc., 342, 151 (1994).Google Scholar
4.Harrison, H. B., Yao, Z.-Q., Dimitrijev, S., Sweatman, D., and Yeow, Y.-T, Mat. Res. Soc. Symp. Proc., 387, 233 (1995).Google Scholar
5.Yao, Z-Q, J. Appl. Phys., 78, 2906 (1995).Google Scholar
6.Lai, W. H., Li, M. F., Chan, L., and Chua, T. C., J. Vac. Sci. Technol. B, 17 2226 (1999).Google Scholar
7.Shallenberger, J. R., Cole, D. A., and Novak, S. W., J. Vac. Sci. Technol. A, 17, 1086 (1999).Google Scholar
8.Hedge, R. I., Maiti, B., and Tobin, P. J., J. Electrochem. Soc., 144 1081 (1997).Google Scholar
9.Gosset, L. G., Ganem, J.-J., Trimaille, I., Rigo, S., Rochet, F., Dufour, G., Jolly, F., Stedile, F. C., Baumvol, I. J. R., Nucl. Instr. and Meth. in Phys. Res. B, 136– 138, 521 (1998).Google Scholar
10.Sagnes, I., Laviale, D., Regache, M., Glowacki, F., Deutschmann, L., Blanchard, B., and Martin, F., Mat. Res. Soc. Symp. Proc., 429, 251 (1996).Google Scholar