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Analysis of AlGaAs/GaAs Multiple Quantum Well Dual Waveguides Defined by Ion Implantation Induced Intermixing

Published online by Cambridge University Press:  10 February 2011

Kai-Ming Lo
Kai-Ming Lo*
Affiliation:
32 Greenwood Ave. #7, Quincy, MA 02170, kmlo@xensei.com
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Abstract

A simple and accurate model is presented for the study of ion-implanted AlGaAs/GaAs multi-quantum well dual waveguides. The impurity induced disordering defined multiquantum well dual waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They also provide a more flexible control over the waveguiding and coupling characteristics by changing parameters such as diffusion time, ion implant energy, mask width, and waveguide separation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 467
Copyright
Copyright © Materials Research Society 1998

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