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Analysis of Crystal Nucleation and Growth in Amorphous CobaltDisilicede.

Published online by Cambridge University Press:  15 February 2011

D. A. Smith ,
P. V. Evans  and
S. R. Koppikar
D. A. Smith
Affiliation:
Stevens Institute of Technology, Hoboken NJ 07030
P. V. Evans
Affiliation:
Alean Research Center, Banbury, Oxon, UK
S. R. Koppikar
Affiliation:
Stevens Institute of Technology, Hoboken NJ 07030
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Abstract

Extensive in situ investigations of the crystallization ofamorphous cobalt disilicide have been conducted using a transmissionelectron microscope with a hot stage. Thermodynamic and kinetic parametersdescribing the heterogeneous transformation have been evaluated. The angleof contact betwen crystalline and amorphous material was determined fromtilting experiments to be 76°. Nucleation rates in samples 40 nm thick wereevaluated at various temperatures and compared with thermodynamic models todeduce an interfacial energy between amorphous and crystalline COSi2 (σca) of 121 mJ/m2 and anactivation energy for crystallization of 1.27 eV. Johnson-Mehl-Avramianalysis of the observed continuous nucleation and steady state isotropiegrowth in 100 nm thick samples points to a gradual transition of thecrystallization mode from 3-dimensional (n=4) to 2-dimensional (n=3) growthas might be expected. Comparison of the nucleation and growth rates in 40 nmand 100 nm thick samples demonstrated the influence of surfaces oncrystallization phenomena in thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 271
Copyright
Copyright © Materials Research Society 1994

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References

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