Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-22T12:57:17.590Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Crystalline in GaN Epitaxial Layer after the Wafer Dicing Process

Published online by Cambridge University Press:  15 January 2014

Hideyuki Taguchi ,
Amane Kitahara ,
Shugo Miyake ,
Akimitu Nakaue  and
Yasufumi Fujiwara
Hideyuki Taguchi
Affiliation:
Physical Analysis & Evaluation Center, Electronics Division, KOBELCO RESEARCH INSTITUTE, INC., 1-5-5, Takatsukadai, Nishi-ku, Kobe, 651-2271, JAPAN Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka, 565-0871, JAPAN
Amane Kitahara
Affiliation:
Physical Analysis & Evaluation Center, Electronics Division, KOBELCO RESEARCH INSTITUTE, INC., 1-5-5, Takatsukadai, Nishi-ku, Kobe, 651-2271, JAPAN
Shugo Miyake
Affiliation:
Physical Analysis & Evaluation Center, Electronics Division, KOBELCO RESEARCH INSTITUTE, INC., 1-5-5, Takatsukadai, Nishi-ku, Kobe, 651-2271, JAPAN
Akimitu Nakaue
Affiliation:
Physical Analysis & Evaluation Center, Electronics Division, KOBELCO RESEARCH INSTITUTE, INC., 1-5-5, Takatsukadai, Nishi-ku, Kobe, 651-2271, JAPAN
Yasufumi Fujiwara
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka, 565-0871, JAPAN
Get access

Abstract

The crystallinity of a GaN epitaxial layer on a sapphire substrate after the mechanical ding process was estimated by transmission electron microscopy (TEM) and Raman spectroscopic analysis. TEM observation results showed that, the screw dislocations as a threading dislocation were induced by the mechanical dicing process in the limited area up to approximately 1.2 μm from the dicing-line. On the other hand, the crystal strains were up to approximately 7 μm from the dicing-line edge measured by the Raman spectroscopic analysis. The distance difference between the area of the screw dislocations and of the residual strain is caused by the stress relaxation.

Keywords

dislocationsstress/strain relationshipIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1593: Symposium J – Nitride Semiconductors -Bulk and Related Growth and Characterization , 2013 , jsapmrs13-1593-6674
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Das, A., Das, A., Chang, L. B., Lai, C. S., Lin, R. M., Chu, F. C., Lin, Y. H., Chow, L., and Jeng, M. J., Appl. Phys. Express 6, 036601 (2013)CrossRefGoogle Scholar
Mion, C., Muth, J. F., Preble, E. A., and Hanser, D., Appl. Phys. Lett. 89, 92123 (2006)CrossRefGoogle Scholar
Heikkilä, O., Oksanen, J., and Tulkki, J., Appl. Phys. Lett. 102, 111111 (2013)CrossRefGoogle Scholar
Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997)CrossRefGoogle Scholar
Moram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., and Humphreys, C. J., Appl. Phys. Lett. 91, 152101 (2007)CrossRefGoogle Scholar
Weyher, J. L., Ashraf, H., and Hageman, P. R., Appl. Phys. Lett. 95, 031913 (2009)CrossRefGoogle Scholar
Zhang, W., Liu, P., Jackson, B., Sun, T., Huang, S. J., Hsu, H. C., Su, Y. K., Chang, S. J., Li, L., Li, D., Wang, L., Hu, X. D., and Xie, Y. H., J. Appl. Phys. 113, 144908 (2013)CrossRefGoogle Scholar
Wong, W. S., Sands, T., Cheung, N. W., Kneissl, M., Mei, D. P., Romano, L. T., and Johnson, N. M., Appl. Phys. Lett. 75, 1360 (1999)CrossRefGoogle Scholar
Ruvimov, S., Weber, Z. L., Suski, T., Ager, J. W., Washburn, J., Krueger, J., Kisielowski, C., Weber, E. R., Amano, H., and Akasaki, I., Appl. Phys. Lett. 69, 990 (1996)CrossRefGoogle Scholar
Gu, E., Jeon, C. W., Choi, H. W., Rice, G., Dawson, M. D., Illy, E. K., and Knowles, M. R. H., Thin Solid Film 453-454, 462 (2004)CrossRefGoogle Scholar
Xiong, C., Jiang, F., Fang, W., Wang, L., Mo, C., and Liu, H., Journal of Luminescence 122-123, 185 (2007)CrossRefGoogle Scholar
Li, J., Hwang, H., Ahn, E. C., Chen, Q., Kim, P., Lee, T., Chung, M., and Chung, T., Electronic Components and Technology Conference, 761 (2007)Google Scholar
Takyu, S., Kurosawa, T., Shimizu, N. and Harada, S., Electronic Components and Technology Conference, 1623 (2006)Google Scholar
Kuo, D. S., Lam, K. T., Wen, K. H., Chang, S. J., Ko, T. K., and Hon, S. J., Materials Science in Semiconductor Processing 15, 52 (2012)CrossRefGoogle Scholar
Taguchi, H., Kitahara, A., Miyake, S., Nakaue, A., Nishikawa, A., and Fujiwara, Y., J. Phys. : Conf. ser. 417, 012055 (2013)Google Scholar
Srikant, V., Speck, J. S., and Clarke, D. R., J. Appl. Phys. 82, 4286 (1997)CrossRefGoogle Scholar
Heinke, H., Kirchner, V., Einfeldt, S., and Hommel, D., Appl. Phys. Lett. 77, 2145 (2000)CrossRefGoogle Scholar
Harima, H., J. Phys. : Condens. Matter. 14, R967 (2002)Google Scholar