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Analysis of Silicide / Diffusion Contact Resistance Making Use of Transmission Line Stuctures

Published online by Cambridge University Press:  01 February 2011

Amal Akheyar ,
Anne Lauwers ,
Richard Lindsay ,
Muriel de Potter ,
Georg Tempel  and
Karen Maex
Amal Akheyar
Affiliation:
Infineon technologies AG, affiliated to IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
Anne Lauwers
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Richard Lindsay
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Muriel de Potter
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Georg Tempel
Affiliation:
Infineon technologies AG, affiliated to IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
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Abstract

This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain region was studied by making use of dedicated transmission line structures. The transmission line structures (TLM) consist of alternating silicided and unsilicided diffusion segments, obtained by making use of a salicide blocking mask. Our TLM results show that the contact resistance has a strong dependence on the doping profile of the diffused region and increases with decreasing surface doping, with increasing Co-silicide thickness, annealing temperatures and time of silicidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B1.10
Copyright
Copyright © Materials Research Society 2002

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References

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