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Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

Published online by Cambridge University Press:  21 February 2011

N. V. Edwards ,
M. D. Bremser ,
T. W. Weeks Jr ,
R. S. Kern ,
H. Liu ,
R. A. Stall ,
A. E. Wickenden ,
K. Doverspike ,
D. K. Gaskill  and
J. A. Freitas Jr.
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N. V. Edwards
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
T. W. Weeks Jr
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
R. S. Kern
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
H. Liu
Affiliation:
EMCORE Corp., Somerset, NJ 08873 Presently at Hewlett-Packard, San Jose, CA 95131
R. A. Stall
Affiliation:
EMCORE Corp., Somerset, NJ 08873
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, DC 20375
K. Doverspike
Affiliation:
Presently at Hewlett-Packard, San Jose, CA 95131 Naval Research Laboratory, Washington, DC 20375
D. K. Gaskill
Affiliation:
Naval Research Laboratory, Washington, DC 20375
J. A. Freitas Jr.
Affiliation:
Sachs-Freeman Associates, Landover, MD 20785-5396
U. Rossow
Affiliation:
Department of Physics, N. C. State University, Raleigh, NC 27695-8202
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
D. E. Aspnes
Affiliation:
Department of Physics, N. C. State University, Raleigh, NC 27695-8202
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Abstract

We report the dielectric functions of various GaN samples as measured by spectroscopic ellipsometry. Structure related to the A and B excitons is resolved at room temperature, in principle allowing strain to be assessed. However, the data indicate that dead-layer and dispersion effects are present, preventing a simple interpretation. We discuss various complications including the Edn/dE contribution to dispersion, which is important for laser action. Our data appear to indicate that the spin-orbit splitting of GaN is about 15 meV, somewhat larger than the currently accepted value of about 11 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 405
Copyright
Copyright © Materials Research Society 1996

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References

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