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Analysis of the Amorphous Silicon Carbide/Crystalline Silicon Interface

Published online by Cambridge University Press:  25 February 2011

M. M. Rahman ,
T. Harjono ,
K. H. Lui ,
F. E. Pagaduan ,
H. Inokawa ,
C. Y. Yang  and
Dian Sugiarto
M. M. Rahman
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
T. Harjono
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
K. H. Lui
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
F. E. Pagaduan
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
H. Inokawa
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
C. Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Dian Sugiarto
Affiliation:
Greyhawk Systems, Inc., Milpitas, CA 95035
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Abstract

The performance and reliability of silicon-based hetero-structure devices depend critically on their interfacial characteristics. Here we present high-resolution TEM (HRTEM) results for the a-SiC:H/c-Si (100) interface, substrate doping, and interface electrical characteristics derived from an Al/undoped a-SiC:H/p-Si metal-insulator-semiconductor (MIS) structure. The HRTEM study reveals an interface with a maximum asperity of three atomic planes. The substrate dopant profile for depths less than an extrinsic Debye length from the interface is computed from an iterative fit to the C-V data. A density of interface traps (Dit) of 1011 eV−1cm−2 at midgap is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 213
Copyright
Copyright © Materials Research Society 1990

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References

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