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Angle Resolved Time-of-Flight Measurements of the Excimer Laser Induced Etching of Silicon in a Chlorine Environment

Published online by Cambridge University Press:  25 February 2011

T.S. Baller ,
J. van Zwol ,
S.T. de Zwart ,
G.N.A. van Veen ,
H. Fell  and
J. Dieleman
T.S. Baller
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
J. van Zwol
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
S.T. de Zwart
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
G.N.A. van Veen
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
H. Fell
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
J. Dieleman
Affiliation:
Philips Research Laboratories, PO. BOX 80.000, 5600 JA Eindhoven, The Netherlands
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Abstract

Si (100) samples have been irradiated with excimer laser pulses (λ = 308nm, pulsewidth =28ns) in a low pressure chlorine environment, at a fluence just enough to melt the surface. Time-of-flight spectra of the particles desorbed due to the laser irradiation have been measured as a function of effective chlorine pressure and desorption angle. Maxwell- Boltzmann distributions have been used to fit the measurements. The mean kinetic energy per particle increases with increasing chlorine pressure. Angular distributions of the desorbed particles are found to be cosine like at a chlorine coverage much less than a monolayer and sharply peaked along the surface normal at coverages on the order of a monolayer. Monte-Carlo simulations of the desorption process show that due to collisions between the desorbed particles the change in angular distribution can be explained. The increase in mean energy with increasing chlorine coverage however cannot be explained by gas phase collisions. A possible desorption process is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 299
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Alfano, R.R., Semiconductors Probed by Ultrafast Laser Spectroscopy, (Academic Press, New York, 1984)Google Scholar
2. Bauerle, D., Chemical Processing with Lasers, 1st ed. (springer, Berlin, 1986)CrossRefGoogle Scholar
3. Bailer, T., Ooostra, D.J., Vries, A.E. de and Veen, G.N.A. van, J. Appl. Phys. 60, 3221 (1986)Google Scholar
4. Dieleman, J., in Photon, Beam and Plasma Enhanced Processing, Proc. E-MRS 1987 (editors Golanski, A., NGuyen, V.T. and Krimmel, E.F.)Google Scholar
5. Heide, P.A.M. van der, Hofman, M.J. Baan and Ronde, J., Philips tecnical note 1987 Google Scholar
6. Florio, J.V. and Robertson, W.D., Surf. Sci. 18, 398 (1969)Google Scholar
7. Bailer, T.S., Veen, G.N.A. van and Dieleman, J., J. Vac. Sci. Technol. A6, 1409 (1988)Google Scholar
8. Cowin, J.P., Auerbach, D.J., Becker, C. and Wharton, L., Surf. Sci. 78, 545 (1978)CrossRefGoogle Scholar
9. Noorbatcha, I. and Lucchese, R.R.. J. Chem. Phys. 86, 5816 (1987) I. Noorbatcha and R.R. Lucchese, Phys. Rev. B. 36, 4978 (1987)CrossRefGoogle Scholar
10. Feil, H. and Bailer, T.S., to be publishedGoogle Scholar
11. Jonge, R. de, Majoor, J.W.F., Benoist, K.W. and Vries, A.E. de, Eur. Phys. lett. 2, 843 (1986)Google Scholar
12. Antoniewicz, P.R., Phys. Rev. B 21, 3811 (1980)Google Scholar
13. Buntin, S.A., Richter, L.J., Cavanagh, R. and King, D.S., Phys. Rev. Lett. 61, 1321 (1988)Google Scholar