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Anisotropic Si Etching by a Supersonic Cl2 Beam

Published online by Cambridge University Press:  25 February 2011

Yuden Teraoka ,
Fumihiko Uesugi  and
Iwao Nishiyama
Yuden Teraoka
Affiliation:
NEC Corporation, Opto-Electronics Basic Research Laboratory, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Fumihiko Uesugi
Affiliation:
NEC Corporation, Opto-Electronics Basic Research Laboratory, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Iwao Nishiyama
Affiliation:
NEC Corporation, Opto-Electronics Basic Research Laboratory, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

Perpendicular etching profiles of n+-Si(100) are obtained with a supersonic Cl2 beam at substrate temperature of 900°C. Although small undercuts are observed just below the SiO2 mask, the side wall etching caused by the background Cl2 is almost negligible. An aspect ratio of greater than 6 and selectivity of greater than 8000 are obtained with 0.5 μm line & space mask pattern. From Arrhenius plots of etch rates, an effective activation energy of the nozzle beam etching is determined to 0.53 eV. Assuming that the reaction product is SiCl2, the reaction probability is estimated to be 19% at 900°C. Highly anisotropic etching of the Si(100) obtained here is due to the large reaction probability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 183
Copyright
Copyright © Materials Research Society 1992

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