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Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

A.A. Andreev ,
V.G. Golubev ,
A.V. Medvedev ,
A.B. Pevtsov  and
V.B. Voronkov
A.A. Andreev
Affiliation:
loffe Physico-Technical Institute, St.-Petersburg 194021, Russia
V.G. Golubev
Affiliation:
loffe Physico-Technical Institute, St.-Petersburg 194021, Russia, golubev@gvg.ioffe.rssi.ru
A.V. Medvedev
Affiliation:
loffe Physico-Technical Institute, St.-Petersburg 194021, Russia
A.B. Pevtsov
Affiliation:
loffe Physico-Technical Institute, St.-Petersburg 194021, Russia
V.B. Voronkov
Affiliation:
loffe Physico-Technical Institute, St.-Petersburg 194021, Russia
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Abstract

Cumulative thermal annealing (TA) changes the photoluminescence (PL) intensity in erbium-doped a-Si:H films prepared using DC magnetron sputtering of a composite Er-Si target at substrate temperature 200°C. The intensity of erbium-related 1.54 νm PL at 77 K is enhanced about 50 times after TA at 300°C for 15 min in nitrogen atmosphere. No erbium-related PL is observed after TA at T≤500°C. The TA process is discussed in terms of a model of partial structural rearrangement in an a-Si(Er):H amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 297
Copyright
Copyright © Materials Research Society 1998

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References

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