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Anomalous Carbon Interdiffusion in a-Si:H/a-SiC:H Multilayers

Published online by Cambridge University Press:  21 February 2011

R. Schwarz ,
T. Fischer ,
P. Hanesch ,
J. Lanz ,
W. Schirmacher ,
J. Kolodzey ,
G. Zorn  and
H. Goebel
R. Schwarz
Affiliation:
Technical University of Munich, Physics Department, W-8046 Garching, Germany
T. Fischer
Affiliation:
Technical University of Munich, Physics Department, W-8046 Garching, Germany
P. Hanesch
Affiliation:
Technical University of Munich, Physics Department, W-8046 Garching, Germany
J. Lanz
Affiliation:
Technical University of Munich, Physics Department, W-8046 Garching, Germany
W. Schirmacher
Affiliation:
Technical University of Munich, Physics Department, W-8046 Garching, Germany
J. Kolodzey
Affiliation:
University of Delaware, Department of Electrical Engineering, Newark DE, USA
G. Zorn
Affiliation:
Siemens AG, SFE, W-8000 München 83, Germany
H. Goebel
Affiliation:
Siemens AG, SFE, W-8000 München 83, Germany
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Abstract

The interdiffusion of carbon in a-Si:H and a-Si1-xCx:H multilayers is measured by analyzing the time evolution of the X-ray diffraction from the superlattices. A time dependent diffusivity D(t)which follows a power law is found. The theoretical analysis shows that such a time dependence, referred to as “dispersive” or “anomalous” diffusion and studied for hydrogen diffusion in the literature, is fundamentally related to the amorphous structure of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 559
Copyright
Copyright © Materials Research Society 1992

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References

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