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Anomalous Transient Tail Diffusion of Boron in Silicon: Kinetic Modeling of Diffusion and Cluster Formation

Published online by Cambridge University Press:  25 February 2011

N.E.B. Cowern ,
H.F.F. Jos ,
K.T.F. Janssen  and
A.J.H. Wachters
N.E.B. Cowern
Affiliation:
Philips Centre for Manufacturing Technology, P.O. Box 218, 5600 MD Eindhoven, The Netherlands
H.F.F. Jos
Affiliation:
Philips Components, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
K.T.F. Janssen
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
A.J.H. Wachters
Affiliation:
Philips Centre for Manufacturing Technology, P.O. Box 218, 5600 MD Eindhoven, The Netherlands
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Abstract

A kinetic modeling approach is used together with experimental studies to gain insight into the processes taking place during anomalous transient diffusion. A physical process analogous to B clustering is found to play an important role, even at B concentrations well below the solid solubility limit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 605
Copyright
Copyright © Materials Research Society 1990

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References

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