Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-13T02:12:59.025Z Has data issue: false hasContentIssue false
  • English
  • Français

Antireflection Coating for External-Cavity Quantum Cascade Laser Near 5 THz

Published online by Cambridge University Press:  01 February 2011

David B. Fenner ,
Joel M. Hensley ,
Mark G. Allen ,
Jihua Xu  and
Alessandro Tredicucci
David B. Fenner
Affiliation:
Fenner@psicorp.com, Physical Sciences Inc., Photonics and BioMed Tech, 20 New England Business Center, Andover, MA, 01810, United States, 978-738-8205
Joel M. Hensley
Affiliation:
Hensley@psicorp.com, Physical Sciences Inc., Photonics, 20 New England Business Center, Andover, MA, 01810, United States
Mark G. Allen
Affiliation:
Allen@psicorp.com, Physical Sciences Inc., Photonics, 20 New England Business Center, Andover, MA, 01810, United States
Jihua Xu
Affiliation:
tredicucci@sns.it, Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
Alessandro Tredicucci
Affiliation:
tredicucci@sns.it, Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
Get access

Abstract

We report a simple and practical method to design and fabricate antireflection (AR) coatings for the emission facet of GaAs-based laser chips suited to operating in the very far infrared (IR) or terahertz (THz) spectral region. Vacuum-deposited silica films about 8 Ým thick serve as a single layer, quarter-wave AR and with reflectivities measured below 0.5% over ~10 cm-1 range in the far IR. Quantum cascade lasers (QCL) thus coated function well at 8-10 K coupled to a tunable, external cavity optical system at ~158 cm-1 (∼4.75 THz).

Keywords

optical propertieslaserthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1016: Symposium CC – Materials and Material Structures Enabling Terahertz Technology , 2007 , 1016-CC07-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hubers, H.-W. et al. , “High-resolution gas spectroscopy with a distributed feedback terahertz quantum cascade laser,” Appl. Phys. Lett. 89, 061115 (2006).Google Scholar
2. Hosako, I., “Multilayer optical thin films for use at terahertz frequencies: method of fabrication,” Appl. Optics 44, 3769 (2005).Google Scholar
3. Kawase, K. and Hiromoto, N., “Terahertz-wave antireflection coating on Ge and GaAs with fused quartz,” Appl. Optics 37, 1862 (1998).Google Scholar
4. Gatesman, A.J. et al. , “An antireflection coating for silicon optics at terahertz frequencies,” Microwave Guide. Wave Lett. 10, 264 (2000).Google Scholar
5. Grischkowsky, D. et al. , “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B7, 2006 (1990).Google Scholar
6. Johnson, C.J., Sherman, G.H. and Weil, R., “Far infrared measurement of the dielectric properties of GaAs and CdTe at 300 K and 8 K,” Appl. Optics 8, 1667 (1969).Google Scholar
7. Palik, E.D., ed., Handbook of Optical Constants of Solids, vols. 1 and 2 (Academic Press, 1985).Google Scholar
8. Lee, K.-S. et al. , “Tera Tool,” IEEE Circuits & Dev. 18, 23 (2002).Google Scholar
9. Kohler, R. et al. , “Terahertz semiconductor heterostructure laser,” Nature 417, 156 (2002).Google Scholar
10. Hensley, et al, “An External Cavity 4.7 Terahertz Quantum Cascade Laser,” Opt. THz Sci. Technol. (OTST), March 2007.Google Scholar