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The Application of Reactive ion Etching to Oxide Films on 150mm Substrates

Published online by Cambridge University Press:  21 February 2011

Stephen Dunfield ,
Tom Deacon  and
Tam Pandhumsoporn
Stephen Dunfield
Affiliation:
Etch Applications Laboratory, Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, CA 95054
Tom Deacon
Affiliation:
Etch Applications Laboratory, Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, CA 95054
Tam Pandhumsoporn
Affiliation:
Etch Applications Laboratory, Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, CA 95054
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Abstract

The application of reactive ion etching to oxide films on 150mm sub-strates was studied. Etch rates of greater than 450 Å/min for thermal oxide with overall uniformities of less than ±5% have been observed. Selectivity of thermal oxide to polysilicon (20ω per square) has been observed to be in the range of 14:1 to 17:1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 261
Copyright
Copyright © Materials Research Society 1985

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References

1) Within-a-Wafer Uniformity. Using data from 13 points on 18 wafers, within-a-wafer uniformity is calculated as: Wafer-to-Wafer Uniformity. Using center point data from 18 wafers, wafer-to-wafer uniformity is calculated as: Run-to-Run Uniformity: Using mean center point etch rate data for each of three runs, run-to-run uniformity is calculated as: Google Scholar
2) The measurement pattern was per SEMI specifications with additional points added at equal intervals between the edge and the center of the wafer.Google Scholar
3) Coburn, J.W., Plasma Etching, pp. 49–54 and 65-68, (1980).Google Scholar
4) Tachi, , et al., ISIAT, p. 345, 1980.Google Scholar
5) Mayer, T.M., et al., Journal of the Electrochemical Society, pp. 129, 585, 1982.Google Scholar
6) Benzing, D., Egitto, F., Maydan, D.,and Wang, D., Solid State Technology, Vol.24, No. 12, 1981.Google Scholar