Published online by Cambridge University Press: 22 February 2011
Depth profiling is becoming a common method of determining composition gradients for those research facilities that have access to SIMS. The problems with this procedure are briefly discussed but well referenced for those interested in using the technique. Spectra for application of depth profiling to a tantalum pentoxide layer on tantalum, silicon implanted in silica, preferential sputtering of niobium and surface treated lithium alumina silicate glass are presented.