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ArF Excimer Laser Doping into Amorphous Silicon thin films

Published online by Cambridge University Press:  21 February 2011

M. Elliq ,
A. Slaoui ,
E. Fogarassy ,
H. Pattyn ,
R. Stuck  and
P. Siffert
M. Elliq
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
A. Slaoui
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
E. Fogarassy
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
H. Pattyn
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
R. Stuck
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
P. Siffert
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UPR 292 CNRS), F-67037 Strasbourg Cedex, France
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Abstract

Doping of amorphous silicon (a-Si or a-Si:H) coated by a spin-on oxide film containing the dopant (phosphorus or boron) using an ArF excimer laser has been investigated as a function of laser fluence, number of pulses and dopant film thickness. From these results, it is found that the surface concentration and the junction depth vary with the number of pulses, and that the doping process is rate limiting. Sheet resistance lower than 10 kΩ/□ have been obtained. It is also shown that for a-Si:H films, laser irradiation produces exodiffusion of hydrogen from the molten layer resulting in rough surface. This one-step process seems suitable for polycrystalline silicon thin film transistors (TFT's) fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 739
Copyright
Copyright © Materials Research Society 1991

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References

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