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Argon Ion and Excimer Laser Induced Epitaxy of GaP

Published online by Cambridge University Press:  25 February 2011

U. Sudarsan ,
N. W. Cody ,
T. Dosluoglu  and
R. Solanki
U. Sudarsan
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR 97006-1999
N. W. Cody
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR 97006-1999
T. Dosluoglu
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR 97006-1999
R. Solanki
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR 97006-1999
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Abstract

Laser-induced epitaxial growth of GaP has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon ion laser operating at 514.5 nm was used to ‘direct-write’ epitaxial microstructures of GaP on silicon using a pyrolytic process. An ArF excimer laser has also been used to demonstrate homoepitaxy utilizing the photolytic process.

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References

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