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Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

Published online by Cambridge University Press:  10 February 2011

Jae-Hong Jeon ,
Kee-Chan Park ,
Ji-Hoon Kang ,
Min-Cheol Lee  and
Min-Koo Han
Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Ji-Hoon Kang
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
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Abstract

ABSTARCT

Excimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 199
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCE

1. Proano, R.E., Misage, R.S. and Ast, D.G., IEEE Trans. Electron Devices, 36, 1915 (1989).Google Scholar
2. Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. 28, L2132 (1989).Google Scholar
3. shimizu, K., Nakamura, K., Higashimoto, M., Suguira, S. and Matsumura, M., Jpn. J. Appl. Phys. 32, 452 (1993).Google Scholar
4. Im, J. S. and Kim, H. J., Appl. Phys. Lett.. 64, 2303 (1994).Google Scholar
5. Shimizu, K., Sugiura, O. and Matsumura, M., IEEE Trans. Electron Devices, 40, 112 (1993).Google Scholar
6. Viatella, J.W. and Singh, R.K., Mater. Res. Soc. Symp. Proc. 472, 415 (1997).Google Scholar
7. Watanabe, H., Miki, H., Sugai, S., Kawasaki, K. and Kioka, T., Jpn. J. Appl. Phys. 33, 4491 (1994).Google Scholar
8. Kodama, N., Tanabe, H., Sera, K., Hamada, K., Saitoh, S., Okumura, F. and Ikeda, K., Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials (Makuhari, Japan, 1993), pp. 431–433.Google Scholar
9. Kim, H. J. and Im, J. S., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar