Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-28T14:23:04.980Z Has data issue: false hasContentIssue false
  • English
  • Français

a-Si MOS Fet with Native-Oxide Gate Grown by Normal-Pressure and Low-Temperature Thermal-Oxidation Method

Published online by Cambridge University Press:  26 February 2011

Hong-Yong Zhang  and
Masakiyo Matsumura
Hong-Yong Zhang
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, JAPAN
Masakiyo Matsumura
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, JAPAN
Get access

Abstract

Native silicon-dioxide film has been grown thermally under normalpressure and low-temperature conditions, and applied to a gate insulator of amorphous-silicon thin-film transistors. Th highest field-effect mobility under room-temperature conditions was 0.7cm2/Vs. Temperature dependence of the transistor characteristics has also been studied. The transistor has been operated in a wide temperature range from -196 °C to more than 200°C with satisfactorily stable manner. Characteristic temperature of the localized state density distribution has been estimated to be about 20° C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 463
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, H. et al., Normal-Pressure and Low-Temperature Thermal-Oxidation of Silicon, Submitted to Jpn J. Appl. Phys.Google Scholar
2. Uchida, Y. et al., Jpn J. Appl. Phys., 25 1633(1986).Google Scholar
3. Uchida, Y. et al., Jpn.J. Appl. Phys., 24, L812(1985).Google Scholar
4. Uchida, Y. et al., Measurement of Field-Effect Mobility in Hydrogenated Amorphous-Silicon, Tech Papers of Society of Solid State Devices, IECE of Japan SSD83-172 (1984).Google Scholar
5. Kishida, S. et al., Jpn. J. Appl. Phys. 22, 511(1983).Google Scholar