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a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

Published online by Cambridge University Press:  10 February 2011

B. Jagannathan  and
W. A. Anderson
B. Jagannathan
Affiliation:
Center for Electronic and Electro-Optic Materials, Department of Electrical and Computer Eng, State University of New York at Buffalo, Amherst, NY U.S.A 14260
W. A. Anderson
Affiliation:
Center for Electronic and Electro-Optic Materials, Department of Electrical and Computer Eng, State University of New York at Buffalo, Amherst, NY U.S.A 14260
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Abstract

The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/ p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area ∼ 0.24 cm2) yielded about 9.5 % efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 77
Copyright
Copyright © Materials Research Society 1996

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