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The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth

Published online by Cambridge University Press:  01 February 2011

W.M.M. Kessels ,
Y. Barrell ,
P.J. van den Oever ,
J.P.M. Hoefnagels  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Y. Barrell
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
P.J. van den Oever
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450°C) using the time-resolved cavity ringdown technique. The silicon hydrides –SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from –SiH3 to =SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A9.3
Copyright
Copyright © Materials Research Society 2003

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References

[1] Kessels, W.M.M., Smets, A.H.M., Marra, D.C., Aydil, E.S., Schram, D.C., and Sanden, M.C.M. van de, Thin Solid Films 383, 154 (2001).Google Scholar
[2] Ramalingam, S., Maroudas, D., and Aydil, E.S., J. Appl. Phys. 86, 2872 (1999).Google Scholar
[3] Ramalingam, S., Maroudas, D., Aydil, E.S., and Walch, S.P., Surf. Sci. 418, L8 (1998).Google Scholar
[4] Gupta, A., Yang, H., and Parsons, G.N., Surf. Sci. 496, 307 (2002).Google Scholar
[5] Dewarrat, R. and Robertson, J., Appl. Phys. Lett. 82, 883 (2003).Google Scholar
[6] Walch, S., Ramalingam, S., Aydil, E.S., and Maroudas, D., Chem. Phys. Lett. 329, 304 (2000).Google Scholar
[7] Kessels, W.M.M., Severens, R.J., Smets, A.H.M., Korevaar, B.A., Adriaenssens, G.J., Schram, D.C., and Sanden, M.C.M. van de, J. Appl. Phys. 89, 2404 (2001).Google Scholar
[8] Kessels, W.M.M., Boogaarts, M.G.H., Hoefnagels, J.P.M., Schram, D.C., and Sanden, M.C.M. van de, J. Vac. Sci. Technol. A 19, 1027 (2001).Google Scholar
[9] Kessels, W.M.M., Hoefnagels, J.P.M., Boogaarts, M.G.H., Schram, D.C., and Sanden, M.C.M. van de, J. Appl. Phys. 89, 2065 (2001).Google Scholar
[10] Kessels, W.M.M., Leewis, C.M., Sanden, M.C.M. van de, and Schram, D.C., J. Appl. Phys. 86, 4029 (1999).Google Scholar
[11] Kessels, W.M.M., Leroux, A., Boogaarts, M.G.H., Hoefnagels, J.P.M., Sanden, M.C.M. van de, and Schram, D.C., J. Vac. Sci. Technol. A 19, 467 (2001).Google Scholar
[12] Hoefnagels, J.P.M., Stevens, A.A.E., Boogaarts, M.G.H., Kessels, W.M.M., and Sanden, M.C.M. van de, Chem. Phys. Lett. 360, 189 (2002).Google Scholar
[13] Hoefnagels, J.P.M., Barrell, Y., Kessels, W.M.M., and Sanden, M.C.M. van de, to be published.Google Scholar
[14] Matsuda, A., Nomoto, K., Takeuchi, Y., Suzuki, A., Yuuki, A., and Perrin, J., Surf. Sci. 27, 50 (1990).Google Scholar
[15] Kessels, W.M.M., Sanden, M.C.M. van de, Severens, R.J., and Schram, D.C., J. Appl. Phys. 87, 3313 (2000).Google Scholar
[16] Perrin, J. and Broekhuizen, T., Appl. Phys. Lett. 50, 433 (1987).Google Scholar
[17] Perrin, J., Takeda, Y., Hirano, N., Takeuchi, Y., and Matsuda, A., Surf. Sci. 210, 114 (1989).Google Scholar
[18] Doughty, D.A., Doyle, J.R., Lin, G.H., and Gallagher, A., J. Appl. Phys. 67, 6220 (1990).Google Scholar
[19] Itabashi, N., Nishikawa, N., Magane, M., Naito, S., Goto, T., Matsuda, A., Yamada, C., and Hirota, E., Jpn. J. Appl. Phys. 29, L505 (1990).Google Scholar
[20] Shiratani, M., Kawasaki, H., Fukuzawa, T., Watanabe, Y., Yamamoto, Y., Suganuma, S., Hori, M., and Goto, T., J. Phys. D 31, 776 (1998).Google Scholar
[21] Nurrudin, A., Doyle, J.R., and Abelson, J.R., J. Appl. Phys. 76, 3123 (1994).Google Scholar
[22] Jasinski, J.M., J. Phys. Chem. 97, 5037 (1993).Google Scholar
[23] Perrin, J., Shiratani, M., Kae-Nune, P., Videlot, H., Jolly, J. and Guillon, J., J. Vac. Sci. Technol. A 16, 278 (1998).Google Scholar
[24] Shiratani, M., Kawasaki, H., Fukuzawa, T., Watanabe, Y., Yamamoto, Y., Suganuma, S., Hori, M., andT. Goto, J. Phys. D 31, 776 (1998).Google Scholar
[25] Kessels, W.M.M., Marra, D.C., Sanden, M.C.M. van de, Aydil, E.S., J. Vac. Sci. Technol. A. 20, 781 (2002).Google Scholar
[26] Marra, D.C., Kessels, W.M.M., Sanden, M.C.M. van de, Kashefizadeh, K., Aydil, E.S., Surf. Sci. 530, 1 (2003).Google Scholar
[27] Gallagher, A., Mater. Res. Soc. Symp. Proc. 70, 3 (1986).Google Scholar
[28] Keudell, A. Von and Abelson, J.R., Phys. Rev. B 59, 5791 (1999).Google Scholar