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Assessment of Silicon—On—Insulator Technologies for Vlsi

Published online by Cambridge University Press:  28 February 2011

B-Y. Tsaur
B-Y. Tsaur*
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173–0073
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Abstract

A high—performance, cost—effective silicon—on—insulator (SOI) technology would have important near—term applications in radiation—hardened electronics and longer term applications in submicrometer VLSI. The advantages of SOI over bulk Si technology for these applications will be outlined, and CMOS, CJFET, andbipolar device structures being developed for SOI will be discussed. The current status and future prospects of the two most promising SOI technologies —— beam recrystallization and high—dose oxygen implantation —— will be reviewed, with emphasis on such issues critical to commercialization as material quality and manufacturing feasibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 365
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Tsaur, B-Y., Mountain, R. W., Chen, C. K., Turner, G. W., and Fan, J. C. C., IEEE Electron Device Lett. EDL–5, 238 (1984).Google Scholar
2.Sanders, T. J., Boarman, J. W., Wood, G. M., and Kasten, A. J., IEEE Trans. Nucl. Sci. NS–29, 1733 (1982).Google Scholar
3.Zuleeg, R., Notthoff, J. K., and Troeger, G. L., IEEE Electron Device Lett. EDL–5, 21 (1984).Google Scholar
4.Tsaur, B-Y. and Choi, H. K., unpublished.Google Scholar
5.See, for example, Rung, R. D., IEDM Tech. Dig. (1984), p. 574.Google Scholar
6.Ohwada, K., Omura, Y., and Sano, E., IEEE Trans. Electron Dev. ED–28, 1084 (1981).Google Scholar
7.Haond, M., Dutartre, D., and Bensahel, D., this symposium, paper C1.7.Google Scholar
8.Chen, C. K., West, K. W., Pfeiffer, L., Geis, M. W., Darack, S., and Tsaur, B-Y., this symposium, paper C7.18.Google Scholar
9.Geis, M. W., Chen, C. K., Smith, H. I., and Tsaur, B-Y., this symposium, paper C5.3.Google Scholar
10.Celler, C. K., Hemment, P. L. F., West, K. W., and Gibson, J. M., this symposium, paper C3.3.Google Scholar
11.Chen, C-E., Blake, T. G. W., Hite, L. R., Malhi, S. D. S., Mao, B-Y., and Lam, H. W., IEDM Tech. Dig. (1984), p. 702.Google Scholar
12.Davis, G. E., Hite, L. R., Blake, T. G. W., Chen, C-E., Lam, H. W., and DeMoyer, R. Jr, IEEE Trans. Nucl. Sci. (to be published, Dec., 1985).Google Scholar