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Atiomiic Scale Interface Structure of In0.2Ga0.8As/GaAs Strained Layers Studied by Crosssectional Scanning Tunneijng Microscopy

Published online by Cambridge University Press:  21 February 2011

J. F. Zheng ,
M. B. Salmeron  and
E. R. Weber
J. F. Zheng
Affiliation:
Department of Materials Science, University of California at Berkeley, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
M. B. Salmeron
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science, University of California at Berkeley, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

A molecular beam epitaxy-grown In0.2Ga0.8As/GaAs strained layer structure has been studied by scanning tunneling microscopy in cross-section on the (110) cleavage plane perpendicular to [001] the growth direction. Individual Indium atoms were differentially imaged in the group III sublattice, allowing a direct observation of the interface roughness due to the indium compositional fluctuation. In the In0.2Ga0.8As layers, Indium atoms are found in clusters preferentially along the growth direction with each cluster containing 2-3 indium atoms. Indium segregation induced asymmetrical interface broadening is studied on an atomic scale. The interface of In0.2Ga0.8As grown on GaAs is sharp within 2-4 atomic layers. The interface of GaAs grown on In0.2Ga0.8As is found to be broadened to about 5-10 atomic layers. The atomic scale fluctuation due to indium distribution is about 20 Å along the interface in this case. We conclude that clustering and segregation are the main reason for the In0.2Ga0.8As/GaAs interface roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 111
Copyright
Copyright © Materials Research Society 1994

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