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Atomic Layer Controlled Deposition of Al2O3 Films Employing Trimethylaluminum (TMA) and H2O Vapor

Published online by Cambridge University Press:  15 February 2011

A. C. Dillon ,
A. W. Ott ,
S. M. George  and
J. D. Way
A. C. Dillon
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
A. W. Ott
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
S. M. George
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
J. D. Way
Affiliation:
Dept. of Chemical Engineering and Petroleum Refining, Colorado School of Mines, Golden, CO 80401
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Abstract

Sequential surface chemical reactions for the controlled deposition of Al2O3 films were studied using transmission Fourier transform infrared spectroscopy (FTIR). Experiments were performed in situ in an ultrahigh vacuum UHV chamber using high surface area alumina membranes. Trimethylaluminum [Al(CH3)3] (TMA) and H2O vapor were employed sequentially in an ABAB... binary fashion to achieve atomic layer controlled growth. An optimal Al2O3 growth procedure was established that employed TMA/H2O exposures at .3 Torr and 500 K. The experiments revealed that each reaction was self-terminating and atomic layer controlled growth was dictated by the surface chemistry. The controlled deposition of Al2O3 may be employed on silicon surfaces for the formation of high dielectric gate and passivation layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 335
Copyright
Copyright © Materials Research Society 1994

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References

1. Pearce, C. W. in VLSI Technology 2nd ed., edited by Sze, S. M.. (McGraw-Hill, New York, (1988) Chap. 2.Google Scholar
2. Soto, C. and Tysoe, W. T., J. Vac. Sci. Technol. A 9, 2686 (1991).Google Scholar
3. Higashi, G. S. and Flemming, C. G., Appl. Phys. Lett. 55, 1963 (1989).Google Scholar
4. Fan, J. F., Sugioka, K. and Toyoda, K., Jap. J. Appl. Phys., 30, L1139 (1991).CrossRefGoogle Scholar
5. Pugh, I. -A., and Rao, K.N., in Molecular Spectroscopy: Modern Research edited by Rao, K. N. (Academic, New York 1976).Google Scholar
6. Gupta, P., Colvin, V. L and George, S. M., Phys. Rev. B 37, 8234 (1988).CrossRefGoogle Scholar
7. Dillon, A. C., Robinson, M. B., Han, M. Y. and George, S. M., J. Electrochem. Soc. 139, 537 (1992).CrossRefGoogle Scholar
8. Highwell, E., Anotec Inorganic Membrane Technology, (private communication). Google Scholar
9. Peri, J. B., J. Phys. Chem. 69, 211 (1965).CrossRefGoogle Scholar
10. Dillon, A. C., Ott, A. W., George, S. M. and Way, J. D., (in preparation).Google Scholar
11. Ogawa, T., Spectrochimica Acta, 24, 15 (1968).CrossRefGoogle Scholar
12. Wise, M. L, Koehler, B. G., Gupta, P., Coon, P. A., George, S. M., Surf. Sci. 258, 166 (1991).CrossRefGoogle Scholar
13. Koehler, B. G., Mak, C. H., Arthur, D. A., Coon, P. A. and George, S. M., J. Chem. Phys. 89, 1709 (1988).CrossRefGoogle Scholar
14. Mayer, T. M., Rogers, J. W. Jr. and Michalske, T. A., Chem. Mater. 3, 641 (1991).CrossRefGoogle Scholar
15. Maruyama, T. and Arai, S., Appl. Phys. Lett. 60, 322 (1992).CrossRefGoogle Scholar