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Atomic Layer Deposition of High-k Gate Dielectrics Using MO Precursor and Cyclic Plasma Exposure

Published online by Cambridge University Press:  11 February 2011

Kazuhiko Endo  and
Toru Tatsumi
Kazuhiko Endo
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan
Toru Tatsumi
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan
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Abstract

We have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N2.8
Copyright
Copyright © Materials Research Society 2003

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References

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