Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-10T10:09:03.694Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells

Published online by Cambridge University Press:  21 March 2011

F. Donsanti ,
B. Weinberger ,
P. Cowache ,
M. C. Bernard  and
D. Lincot
F. Donsanti
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231, Paris cedex 05, France
B. Weinberger
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231, Paris cedex 05, France
P. Cowache
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231, Paris cedex 05, France
M. C. Bernard
Affiliation:
Groupe de Physique des Liquides et Electrochimie (UPR CNRS 15), Université Pierre et Marie Curie, 4 place Jussieu, 75232 Paris cedex 05, France
D. Lincot
Affiliation:
lincot@ext.jussieu.fr
Get access

Abstract

Growth and properties of indium sulfide layers (< 300 nm) prepared by atomic layer deposition (ALD) have been studied. Growth rate of about 0.6 A per cycle has been measured for films deposited at 160°C from indium acetylacetonate and hydrogen sulfide precursors. The films are crystalline with the β modification. They possess high band gap values (2.7-2.8 eV) which are related to small grain sizes (3-4 nm) through quantum size effects. Electrical properties have been addressed using the semiconductor electrolyte junction. They are n type with a doping level around 1016 cm−3 and possess a good blocking behavior under reverse bias. The flat band potential is close to -1 V vs MSE. These figures are close to those measured under similar conditions with CdS CBD buffer layers and could explain the good cell performances obtained with ALD In2S3.

Keywords

photovoltaicsindium sulfideatomic layer depositionelectrolyte junctioncopper indium diselenide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.20
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lockande, C. D., Ennaoui, A., Patil, P. S., Giersig, M., Diesner, K., Muller, M., Tributsch, H., Thin Solid Films, 340(1999)18 Google Scholar
[2] Yousfi, E. B., Asikainen, T., Pietu, V., Cowache, P., Powalla, M., Thin Solid Films, 367 (2000)183 Google Scholar
[3] Yousfi, E. B., Weinberger, B., Donsanti, F., Cowache, P. and Lincot, D., Thin Solid Films, 387(2001)39.Google Scholar
[4] Yousfi, E. B., Fouache, J., Lincot, D., Appl. Surf. Science 153 (2000)223.Google Scholar
[5] Yoshida, T., Yamaguchi, K., Toyoda, H., Akao, K., Sugiura, T., Minoura, H., Electrochemical Society Proceedings Volume 97–20, Photoelectrochemistry, (1997)37 Google Scholar
[6] Lincot, D., Vedel, J., Proceedings of the 10th European Photovoltaic Solar energy Conf., (1991)931.Google Scholar