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Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

Published online by Cambridge University Press:  31 January 2011

Sun Kyung Park ,
K. Roodenko ,
Yves J. Chabal ,
L. Wielunski ,
R. Kanjolia ,
J. Anthis ,
R. Odedra  and
N. Boag
Sun Kyung Park
Affiliation:
skparkle@gmail.com, University of Texas at Dallas, Department of Materials Science and Engineering Department, Richardson, Texas, United States
K. Roodenko
Affiliation:
katy.roodenko@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering Department, Richardson, Texas, United States
Yves J. Chabal
Affiliation:
chabal@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, Texas, United States
L. Wielunski
Affiliation:
leszekw@physics.rutgers.edu, Rutgers University, Laboratory for Surface Modification, Piscataway, New Jersey, United States
R. Kanjolia
Affiliation:
Ravi.Kanjolia@sial.com, SaFC Hitech., Haverhill, Massachusetts, United States
J. Anthis
Affiliation:
Jeff.Anthis@sial.com, SAFC Hitech., Haverhill, Massachusetts, United States
R. Odedra
Affiliation:
rajesh.odedra@sial.com, SAFC Hitech., Haverhill, Massachusetts, United States
N. Boag
Affiliation:
n.m.boag@salford.ac.uk, University of Salford, Functional materials, Institute for Materials reasearch, Salford, Manchester, United Kingdom
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Abstract

Atomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

Keywords

atomic layer depositionRuoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D04-02
Copyright
Copyright © Materials Research Society 2009

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