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Atomic Scale Control of Si(001) Surface by Wet-Chemical Treatment

Published online by Cambridge University Press:  21 February 2011

Yukinori Morita  and
Hiroshi Tokumoto
Yukinori Morita
Affiliation:
Joint Research Center for Atom Technology (JRCAT) National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan.
Hiroshi Tokumoto
Affiliation:
Joint Research Center for Atom Technology (JRCAT) National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan.
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Abstract

STM observation of the wet-chemical treated Si(001) surface was carried out. On the surface treated by 1%-HF solution (pH=2), the STM images were always rough and hardly exhibited the atomic feature. The STM images on the surface treated by HCl:HF=19:1 solution (pH<1) after 1%-HF dipping were also rough in a macroscopic scale but they occasionally shown atomlike corrugation in a magnified scale. The atomlike corrugation tends to align toward [110] directions which may reflect the ordered structure on Si(001) surface. This result indicates that in the case of etching by the HCl:HF=19:1 solution, the microscopic roughness on Si(001) surface tends to decrease, which might be explained by the steric hindrance effect during extremely slow etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 293
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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