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Atomic-Ratio effect of transition layer for linear mobility in poly-Si TFTs

Published online by Cambridge University Press:  10 February 2011

M. Y. Jung ,
Y. H. Jung ,
S. S. Bae ,
S. M. Seo ,
D. G. Moon ,
G. H. Lee  and
H. S. Soh
M. Y. Jung
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
Y. H. Jung
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
S. S. Bae
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
S. M. Seo
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
D. G. Moon
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
G. H. Lee
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
H. S. Soh
Affiliation:
LG Elelectronic Inc, LCD R&D center, Anyang-Shi, Kyungki-Do 430-080, KOREA
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Abstract

Poly-Si TFTs with high field effect mobility are fabricated by using PECVD SiO2 layer deposited with a new method: two-step (graded) oxide deposition. To adjust stoichiometry of the poly-Si/oxide interface and the bulk oxide layer, the double layer oxide films were deposited. The oxide films near the interface were deposited with high N2O/SiH4 gas ratio to obtain the stoichiometric layer for good matching between poly-Si and SiO2. The remaining bulk oxide films were deposited with low N2O/SiH4 gas ratio. The composition of the bulk oxide film was measured by using ESCA and the interface layer was analized with ESR. The poly-Si TFT with the double layer gate oxide resulted to the better performance than conventional TFT wth single layer gate oxde.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 273
Copyright
Copyright © Materials Research Society 1997

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