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Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

Published online by Cambridge University Press:  10 February 2011

Kwang-Ki Choi ,
Tae-Yeon Seong ,
Seonghoon Lee ,
Hyunsang Hwang  and
Yong Sun Sohn
Kwang-Ki Choi
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Tae-Yeon Seong
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Seonghoon Lee
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Yong Sun Sohn
Affiliation:
Memory R&D Division, Hyundai Electronics Co., Ltd., Kyoungki-do 467–701, Korea
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Abstract

Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 53
Copyright
Copyright © Materials Research Society 1998

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References

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