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Atomistic Modeling of {311} Defects and Dislocation Ribbons

Published online by Cambridge University Press:  01 February 2011

Bart Trzynadlowski ,
Scott Dunham  and
Chihak Ahn
Bart Trzynadlowski
Affiliation:
trzy@u.washington.edu, University of Washington, Electrical Engineering, Paul Allen Center – Room AE100R, Campus Box 352500, Seattle, WA, 98195, United States
Scott Dunham
Affiliation:
dunham@ee.washington.edu, University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
Chihak Ahn
Affiliation:
Chihak.Ahn@newcastle.ac.uk, University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
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Abstract

Ab-initio calculations of dislocation and {311} defect structures in silicon were performed in order to investigate the formation energies as functions of geometry, including the effects of applied strain, with a simple model. Predictions were made concerning the size at which a {311} defect becomes less favorable than a dislocation loop, and it was shown that this is affected by applied strain.

Keywords

dislocationssimulationelastic properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E06-04
Copyright
Copyright © Materials Research Society 2008

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References

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