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Auger Effect Seen in the Porous Silicon Fast Luminescent Band

Published online by Cambridge University Press:  09 August 2011

R. M'ghaïeth ,
I. Mihalcescu ,
H. Maâref  and
J. C. Vial
R. M'ghaïeth
Affiliation:
Laboratoire de Physique des Semiconducteurs, Facult6 des Sciences de Monastir, Route de l'Environnement, 5000 Monastir, Tunisia.
I. Mihalcescu
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, BP 87, 38402 St Martin d'Hères Cedex, FRANCE, Irina.Mihalcescu@ujf-grenoble.fr
H. Maâref
Affiliation:
Laboratoire de Physique des Semiconducteurs, Facult6 des Sciences de Monastir, Route de l'Environnement, 5000 Monastir, Tunisia.
J. C. Vial
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, BP 87, 38402 St Martin d'Hères Cedex, FRANCE, Irina.Mihalcescu@ujf-grenoble.fr
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Abstract

Time resolved photoluminescence (PL) measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time delayed PL in both cases, a new feature of the PL spectra is identified: the fast-red band, present as well in fresh or aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model where, the Auger effect inside isolated silicon nanocrystallites plays the dominant role.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 33
Copyright
Copyright © Materials Research Society 1999

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References

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