Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-15T07:03:22.365Z Has data issue: false hasContentIssue false
  • English
  • Français

Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)

Published online by Cambridge University Press:  10 February 2011

N. L. Rowell ,
R. L. Williams ,
G. C. Aers ,
H. Lafontaine ,
D. C. Houghton ,
K. Brunner ,
K. Eberl ,
O. Schmidt  and
W. Winter
N. L. Rowell
Affiliation:
National Research Council, Ottawa, Canada K1A 0R6
R. L. Williams
Affiliation:
National Research Council, Ottawa, Canada K1A 0R6
G. C. Aers
Affiliation:
National Research Council, Ottawa, Canada K1A 0R6
H. Lafontaine
Affiliation:
SiGe Microsystems Inc., 1500 Montreal Road, Ottawa, Canada K1A 0R6
D. C. Houghton
Affiliation:
SiGe Microsystems Inc., 1500 Montreal Road, Ottawa, Canada K1A 0R6
K. Brunner
Affiliation:
Max-Planck-lnstitut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
K. Eberl
Affiliation:
Max-Planck-lnstitut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
O. Schmidt
Affiliation:
Max-Planck-lnstitut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
W. Winter
Affiliation:
Max-Planck-lnstitut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
Get access

Abstract

Recent low-temperature photoluminescence (PL) studies will be discussed for coherent Si1-xGex. and Si1-xGexCy alloy multiple quantum wells on Si (001) substrates grown by either ultra-high vacuum chemical vapour deposition or solid source molecular beam epitaxy. An in-plane applied-stress technique will be described which removes systematically band edge degeneracies revealing the lower, PL-active CB. Applied-stress data taken with this technique at ultra-low excitation intensity proved intrinsic type II CB alignment in SiGe on Si (001). Apparent type I alignment observed at higher intensity will also be discussed. New applied stress PL results are presented for Si1-x-yGexCy quantum wells under various grown-in stress condition

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 235
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

«1» Sturm, J. C., Manoharan, H., Lenchyshyn, L. C., Thewalt, M. L. W., Rowell, N. L., Noël, J.-P., and Houghton, D. C., Phys. Rev. Lett. 66, 1362 (1991).Google Scholar
«2» Brunner, K., Eberl, K., and Winter, W., Phys. Rev. Lett. 76, 303 (1996).Google Scholar
«3» Houghton, D. C., Aers, G. C., Rowell, N. L., Brunner, K., Winter, W., and Eberl, K., Phys. Rev. Lett. 78, 2441, 1997.Google Scholar
«4» Robbins, D. J., Canham, L. T., Barnett, S. J., Pitt, A. D., and Calcott, P., J. Appl. Phys. 71, 1407 (1992).Google Scholar
«5» Weber, J. and Alonzo, M. I., Phys. Rev. B 40, 5683 (1991).Google Scholar
«6» Houghton, D. J., Aers, G. C., Yang, S.-R. Eric, Wang, E., and Rowell, N. L., Phys. Rev. Lett. 75, 866 (1995).Google Scholar
«7» Thewalt, M. L. W., Harrison, D. A., Reinhart, C. F., and Wolk, J. A., Phys. Rev. Lett. 79, 269 (1997).Google Scholar
«8» Rowell, N. L., Aers, G. C., Lafontaine, H., and Williams, R. L., Thin Solid Films, in press (1998).Google Scholar
«9» Williams, R. L., Aers, G. C., Rowell, N. L., Brunner, K., Winter, W., and Eberl, K., Appl. Phys. Lett. 72, 1320 (1998).Google Scholar
«10» Schmidt, O. G. and Eberl, K., Phys. Rev. Lett, in press (1998).Google Scholar
«11» Rowell, N. L., Noel, J.-P., Houghton, D. C., Wang, A., Lenchyshyn, L. C., Thewalt, M. L. W, and Perovic, D. D., Appl. Phys. Lett. 74, 2790 (1993).Google Scholar
«12» Lafontaine, H., Houghton, D. C., Rowell, N. L., Sproule, G I., Rolfe, S. J., and Williams, R. L., Physics in Canada, 241 (1996).Google Scholar
«13» Baier, T., Mantz, U., Thonke, K., Sauer, R., Schaffler, F., and Herzog, H.-J., Phys. Rev. B 50,15191 (1994).Google Scholar
«14» Laude, L. D., Pollak, Fred H., and Cardona, M., Phys. Rev. B 3, 2623 (1971).Google Scholar
«15» Brunner, K., Eberl, K., Schmidt, O. G., Winter, W., Glück, M., and König, U., J. Vac. Sci. and Technol. B., in press (1998).Google Scholar
«16» Brunner, K., Winter, W., and Eberl, K., Appl. Phys. Lett. 69, 1279 (1996).Google Scholar