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Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy

Published online by Cambridge University Press:  31 January 2011

Yoshitaka Nakano ,
Keiji Nakamura ,
Yoshihiro Irokawa  and
Masaki Takeguchi
Yoshitaka Nakano
Affiliation:
nakano@isc.chubu.ac.jp, Chubu University, Institute of Science and Technology Research, Kasugai, Japan
Keiji Nakamura
Affiliation:
nakamura@solan.chubu.ac.jp, Chubu University, Kasugai, Aichi, Japan
Yoshihiro Irokawa
Affiliation:
IROKAWA.Yoshihiro@nims.go.jp, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
Masaki Takeguchi
Affiliation:
Takeguchi.Masaki@nims.go.jp, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
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Abstract

Planar Pt/AlGaN/GaN Schottky barrier diodes (SBDs) have been characterized by capacitance-voltage and capacitance deep-level optical spectroscopy measurements, compared to reference Pt/GaN:Si SBDs. Two specific deep levels are found to be located at ∼1.70 and ∼2.08 eV below the conduction band, which are clearly different from deep-level defects (Ec - 1.40, Ec - 2.64, and Ec - 2.90 eV) observed in the Pt/GaN:Si SBDs. From the diode bias dependence of the steady-state photocapacitance, these levels are believed to stem from a two-dimensional electron gas (2DEG) region at the AlGaN/GaN hetero-interface. In particular, the 1.70 eV level is likely to act as an efficient generation-recombination center of 2DEG carriers.

Keywords

nitrideelectronic structuredeep level transient spectroscopy (DLTS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I09-03
Copyright
Copyright © Materials Research Society 2010

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