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Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

Published online by Cambridge University Press:  25 February 2011

Samer Aljishi ,
J. David Cohen ,
Shu Jin  and
Lothar Ley
Samer Aljishi
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
J. David Cohen
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
Shu Jin
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
Lothar Ley
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
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Abstract

The energy distribution and temperature dependence of the conduction and valence band tail density of states in a-Si:H and a-Si,Ge:H alloys is determined via total yield photoelectron spectroscopy. All films are observed to possess purely exponential conduction and valence band tail densities of states; however, the characteristic energy of the conduction band tail increases much more rapidly with temperature in the range of 300K to 550K than that of the valence band tail. This indicates that over that temperature range the conduction band tail is considerably more susceptible to thermal disorder than to structural disorder whereas the reverse holds for the valence band tail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 157
Copyright
Copyright © Materials Research Society 1990

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References

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