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The Behavior of Oxidation Stacking Faults During O2/NF3 Oxidation of Silicon

Published online by Cambridge University Press:  26 February 2011

U. S. Kim  and
R. J. Jaccodine
U. S. Kim
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania 18015
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Abstract

The behavior of oxidation—induced stacking faults(OSFs) during the O2 /NF3 oxidation of silicon has been investigated in the temperature range of 850–1100°C with varying concentration of NF 3 (0.011—0.044 vol%). In this study, we report the rapid and non-linear shrinkage of pregrown OSFs with time by a new oxidation process including small(ppm) additions of fluorine compound to the oxidant. It is also found that the shrinkage rate of OSF decreases as the oxidation time is increased. It is proposed that the fast OSF shrinkage is due to excessive vacancy flux as a result of the reaction of fluorine at the Si/SiO2 interface during the initial transient state, and subsequently the shrinkage rate is reduced as the steady—state condition of vacancy—interstitial recombination is approached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 423
Copyright
Copyright © Materials Research Society 1987

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References

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